Samsung & Qualcomm are Already Working on the Next-gen Snapdragon 845 Platform

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Back in November last year, Qualcomm and Samsung jointly held an event to announce their collaboration to manufacture the Snapdragon 835 SoC. The South Korean conglomerate will be using its cutting edge 10nm FinFET process to develop the Qualcomm’s latest flagship chipset. Samsung is also first smartphone manufacturer to sell the Snapdragon 835 SoC powered smartphone. Now, the latest report suggests both these companies already started working on a new mobile processor for the upcoming Samsung flagship device.

Though the Samsung Galaxy Note 8 will be the company next flagship device that will be launched in the second half of 2017, we don’t think the Snapdragon 845 SoC will be powering that specific device. Instead, we might see an upgraded variant like the Snapdragon 821 SoC. As seen with the Snapdragon 835 SoC, the upcoming Snapdragon 845 SoC will be launched with the Galaxy S9 that will come only in early next year. Take these details with a pinch of salt as there is no official confirmation. Qualcomm is yet to confirm its partner to work for its next-gen flagship processor.

Along with Samsung, the company might also choose Taiwan’s TSMC which is said to be working on the Apple A11 chipsets based on 10nm FinFET process. The upcoming iPhone 7S and 7S Plus along with the limited edition iPhone 8 will be powered by this new processor. Qualcomm has these two options to pick its partner for developing the next-gen flagship Snapdragon processor. LG is out of this competition due to its supply constraints. Samsung also launched its in-house 10nm processor called Exynos 8895 SoC.

Looking at the Antutu benchmark scores, the Exynos 8895 stands next to the Snapdragon 835 SoC. In the next couple of months, we will be seeing a few more new smartphones launching with the advanced Snapdragon 835 SoC like Oneplus 5 and Moto Z2. The Snapdragon 835 SoC is said to offer 27% faster processing speed and 30% more energy efficient compared to Snapdragon 820 SoC based on 14nm FinFET process.

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